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| DSEP 6-06AS HiPerFREDTM Epitaxial Diode with soft recovery IFAVM = 6 A VRRM = 600 V trr = 20 ns VRSM V 600 VRRM V 600 Type DSEP 6-06AS Marking on product 6P060AS A C TO-252AA (DPAK) Anode Anode Cathode (Flange) Symbol IFRMS IFAVM IFRM IFSM A EAS IAR TVJ TVJM Tstg Ptot Weight Symbol IR VF RthJC trr IRM Conditions TVJ = TVJM TC = 152C; rectangular, d = 0.5 tP < 10 s; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms TVJ = 25C; non-repetitive IAS = 0.8 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 26 6 12 A A A 40 mJ A C C C W g Features * * * * * Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour (50 Hz), sine 0.1 0.1 -40...+175 175 -40...+150 Applications * Anti saturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders Advantages TC = 25C typ. Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 6 A; TVJ = 150C TVJ = 25C 55 0.3 Characteristic Values typ. max. 50 0.2 1.33 2.02 2.8 A mA V V K/W ns A * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling IF = 1 A; -di/dt = 200 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 10 A; -diF/dt = 100 A/s TVJ = 100C 20 3.5 tbd 4.4 Dimensions see pages D4 - 85-86 IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 1-2 432 DSEP 6-06AS 10 A 8 IF 6 TVJ =150C TVJ =100C TVJ = 25C 4 400 Qr 600 IF = 12A IF = 6A IF = 3A 1000 nC 800 TVJ = 100C VR = 300V IRM 20 IF = 12A IF = 6A IF = 3A 10 A 30 TVJ = 100C VR = 300V 2 200 0 0.0 0.5 1.0 1.5 VF 2.0 V 0 100 0 A/s 1000 -diF/dt 0 200 400 600 A/s 1000 800 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 110 ns TVJ = 100C VR = 300V Fig. 3 Peak reverse current IRM versus -diF/dt 20 V tfr 15 VFR 10 0.9 VFR tfr 0.6 1.2 s 2.0 1.6 Kf 1.2 trr 100 IF = 12A IF = 6A IF = 3A 90 0.8 IRM Qr 80 5 70 TVJ = 100C IF = 6A 0.3 0.4 0.0 0 40 80 120 C 160 TVJ 60 0 200 400 600 -diF/dt 800 A/s 1000 0 0 200 400 0.0 600 A/s 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 10 K/W 1 ZthJC 0.1 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt 0.01 0.001 0.00001 DSEP 6-06AS NOTE: Fig. 2 to Fig. 6 shows typical values 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions and dimensions. 432 (c) 2004 IXYS All rights reserved 2-2 |
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